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A 2.5-GS/s 30-mW 4-bit flash ADC in 90nm CMOS
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
2008 (English)In: NORCHIP, IEEE , 2008, 264-267 p.Conference paper, Published paper (Refereed)
Abstract [en]

A 2.5 GS/s flash ADC, fabricated in 90 nm CMOS, avoids traditional power, speed and accuracy trade-offs by using comparator redundancy with power-gating capabilities. Redundancy removes the need to control comparator offsets, allowing the large process-variation induced mismatch of small devices in nanometer technologies. This enables the use of small-sized, ultra-low-power comparators. Measurement results show that the ADC dissipates 30 mW at 1.2 V. With 63 gate-able comparators, the ADC achieves 4.0 effective number of bits.

Place, publisher, year, edition, pages
IEEE , 2008. 264-267 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-43584DOI: 10.1109/NORCHP.2008.4738324Local ID: 74286ISBN: 978-1-4244-2492-4 (print)OAI: oai:DiVA.org:liu-43584DiVA: diva2:264444
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2009-10-29Bibliographically approved

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Sundström, TimmyAlvandpour, Atila

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