liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
248 nm cathodoluminescence in Al1-xInxN (0001) thin films grown on lattice-matched Ti1-yZryN (111) seed layers by low temperature magnetron sputter epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 18Article in journal (Refereed) Published
Abstract [en]

Single-crystal Al0.8 In0.2 N (0001) thin films were grown epitaxially onto lattice-matched Ti0.2 Zr0.8 N (111) seed layers on MgO(111) substrates at 300 °C by magnetron sputter epitaxy. Low-energy ion-assisted epitaxial growth conditions were achieved by applying a substrate potential of -15 V. Cross-sectional high-resolution electron microscopy verified the epitaxy and high-resolution x-ray diffraction ω -rocking scans of the Al0.8 In0.2 N 0002 peak (full width at half maximum ∼2400 arc sec) indicated a high structural quality of the films. Cathodoluminescence measurements performed in a scanning electron microscope at 5 K revealed Al0.8 In0.2 N luminescence at 248 nm, or equivalently 5.0 eV, showing that Al0.8 In0.2 N is a promising material for deep-ultraviolet optoelectronic devices. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 89, no 18
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-43668DOI: 10.1063/1.2382746Local ID: 74505OAI: oai:DiVA.org:liu-43668DiVA: diva2:264528
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Seppänen, TimoHultman, LarsBirch, Jens

Search in DiVA

By author/editor
Seppänen, TimoHultman, LarsBirch, Jens
By organisation
Thin Film PhysicsThe Institute of Technology
In the same journal
Applied Physics Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 196 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf