248 nm cathodoluminescence in Al1-xInxN (0001) thin films grown on lattice-matched Ti1-yZryN (111) seed layers by low temperature magnetron sputter epitaxy
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 18Article in journal (Refereed) Published
Single-crystal Al0.8 In0.2 N (0001) thin films were grown epitaxially onto lattice-matched Ti0.2 Zr0.8 N (111) seed layers on MgO(111) substrates at 300 °C by magnetron sputter epitaxy. Low-energy ion-assisted epitaxial growth conditions were achieved by applying a substrate potential of -15 V. Cross-sectional high-resolution electron microscopy verified the epitaxy and high-resolution x-ray diffraction ω -rocking scans of the Al0.8 In0.2 N 0002 peak (full width at half maximum ∼2400 arc sec) indicated a high structural quality of the films. Cathodoluminescence measurements performed in a scanning electron microscope at 5 K revealed Al0.8 In0.2 N luminescence at 248 nm, or equivalently 5.0 eV, showing that Al0.8 In0.2 N is a promising material for deep-ultraviolet optoelectronic devices. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 89, no 18
IdentifiersURN: urn:nbn:se:liu:diva-43668DOI: 10.1063/1.2382746Local ID: 74505OAI: oai:DiVA.org:liu-43668DiVA: diva2:264528