liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Spin-Conserving Tunneling of Excitons in Diluted Magnetic Semiconductor Double Quantum Wells
Institute of Multidisciplinary Research for Advanced Materials Tohoku University, Sendai 980-8577, Japan.
Institute of Multidisciplinary Research for Advanced Materials Tohoku University, Sendai 980-8577, Japan.
Institute of Multidisciplinary Research for Advanced Materials Tohoku University, Sendai 980-8577, Japan.
Institute of Multidisciplinary Research for Advanced Materials Tohoku University, Sendai 980-8577, Japan.
Show others and affiliations
2008 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 47, 3533-3536 p.Article in journal (Refereed) Published
Abstract [en]

Spin polarization in carrier tunneling was studied in double quantum wells by the polarized photoluminescence-excitation spectroscopy. The double quantum wells consist of a diluted magnetic quantum well of Zn0.77Cd0.15Mn0.08Se and a nonmagnetic quantum well of Zn0.82Cd0.18Se. Efficient spin-conserving tunneling of an exciton as an entity was observed from the nonmagnetic quantum well to the magnetic well. The spin-reversing tunneling was suppressed by two orders of magnitude in high magnetic field. The spin-conserving tunneling time was determined as 20 ps by time resolved photoluminescence measurement.

Place, publisher, year, edition, pages
2008. Vol. 47, 3533-3536 p.
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-44006DOI: 10.1143/JJAP.47.3533Local ID: 75404OAI: oai:DiVA.org:liu-44006DiVA: diva2:264867
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Dagnelund, DanielBuyanova, IrinaChen, Weimin

Search in DiVA

By author/editor
Dagnelund, DanielBuyanova, IrinaChen, Weimin
By organisation
The Institute of TechnologyFunctional Electronic Materials
In the same journal
Japanese Journal of Applied Physics
Natural SciencesCondensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 120 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf