High internal quantum efficiency, narrow linewidth emission InGaAs/GaAs/AlGaAs quantum wire light-emitting diode
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 81, no 15, 2839-2841 p.Article in journal (Refereed) Published
High internal quantum efficiency (similar to60%), narrow linewidth (as narrow as 14 meV) exciton emission at room temperature has been obtained using strained InGaAs V-groove quantum wire (QWR) light-emitting diodes (LEDs). The high efficiency is achieved with the aid of selective carrier injection through self-ordered AlGaAs vertical quantum wells (VQWs), where the VQWs are separated from the InGaAs QWRs by thin GaAs spacer layers in order to reduce nonradiative recombination and inhomogeneous alloy broadening. Evidence for excitonic recombination in these LEDs up to RT is provided by measurements of the emission energy shifts at high magnetic fields.
Place, publisher, year, edition, pages
2002. Vol. 81, no 15, 2839-2841 p.
IdentifiersURN: urn:nbn:se:liu:diva-44025DOI: 10.1063/1.1511279Local ID: 75459OAI: oai:DiVA.org:liu-44025DiVA: diva2:264886