Electroluminescence and photoluminescence excitation study of asymmetric coupled GaAs/AlxGa1-xAs V-groove quantum wires
2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 70, no 4Article in journal (Refereed) Published
We have studied systems of asymmetric coupled GaAs V-groove quantum wires p-i-n diodes, in which the electrons and holes are injected into different wires. Despite the use of a 7 nm thick AlGaAs tunnel barrier, and although we demonstrate that holes tunnel more slowly than electrons, we observe a very efficient and fast tunneling between the quantum wires (QWR's). We attribute this to the achievement of a resonance between hole levels in the two QWR's. Photoluminescence excitation experiments are compared with accurate calculations of the excitonic absorption yielding a level of carrier transfer of nearly 100%. Temperature-dependent electroluminescence exhibits clear effects of tunneling up to room temperature but cannot distinguish separate electron/hole tunneling from exciton tunneling.
Place, publisher, year, edition, pages
2004. Vol. 70, no 4
IdentifiersURN: urn:nbn:se:liu:diva-44028DOI: 10.1103/PhysRevB.70.045302Local ID: 75462OAI: oai:DiVA.org:liu-44028DiVA: diva2:264889