Carrier diffusion in the barrier enabling formation of charged excitons in InAs/GaAs quantum dots
2001 (English)In: XXX International School on the Physics of Semiconducting Compounds,2001, Polish Academy of Sciences, Institute of Physics , 2001, Vol. 100, 387-395 p.Conference paper (Refereed)
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusion of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots. This is proposed as a new tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons.
Place, publisher, year, edition, pages
Polish Academy of Sciences, Institute of Physics , 2001. Vol. 100, 387-395 p.
, Acta Physica Polonica A, ISSN 0587-4246 (print), 1898-794X (online) ; 3
IdentifiersURN: urn:nbn:se:liu:diva-44054Local ID: 75490OAI: oai:DiVA.org:liu-44054DiVA: diva2:264915
XXX International School on the Physics of Semiconducting Compounds, 1-8 June 2001, Jaszowiec, Poland