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Properties of dopants and defects in GaN from bound exciton spectra
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2008 (English)In: Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008Conference paper, Published paper (Other academic)
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2008.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-44184Local ID: 75979OAI: oai:DiVA.org:liu-44184DiVA: diva2:265045
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INVITED TALKAvailable from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22

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Monemar, BoPaskov, PlamenPozina, GaliaBergman, PederHemmingsson, CarlChoubina, TatianaPaskova, Tanja

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Monemar, BoPaskov, PlamenPozina, GaliaBergman, PederHemmingsson, CarlChoubina, TatianaPaskova, Tanja
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The Institute of TechnologyMaterials Science Department of Physics, Chemistry and Biology
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