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Evolution of vacancy defects in GaN after H implantation and subsequent annealing
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2008 (English)In: IWN 2008,2008, 2008Conference paper (Refereed)
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Natural Sciences
URN: urn:nbn:se:liu:diva-44200Local ID: 76027OAI: diva2:265061
Available from: 2009-10-10 Created: 2009-10-10

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Paskova, TanjaMonemar, Bo
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science
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