Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Method
2009 (English)In: PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors / [ed] Marília J. Caldas, Nelson Studart, Melville, N.Y, USA: American Institute of Physics (AIP), 2009, 319-320 p.Conference paper (Refereed)
ZnO nanorods on Si substrates were prepared by either a two-steps chemical bath deposition (CBD) method or thermal evaporation technique. 11 was found that the effective decay time of the near bandgap recombinations strongly depends on the method, which was used to grow the ZnO nanorods. ZnO nanorods grown by the CBD exhibit characteriristic two-exponential decay curves, while ZnO nanorods grown by thermal evaporation technique show single exponential decays. The experimental results show that the fast exponential decay from the CBD grown ZnO nanorods is related to the surface recombination, while the slow decay is related to the "bulk" decay. The results also show that an annealing treatment around 500 degrees C to 700 degrees C significantly reduces the surface recombination rate.
Place, publisher, year, edition, pages
Melville, N.Y, USA: American Institute of Physics (AIP), 2009. 319-320 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 1199
ZnO nanorods, surface recombination, optical properties and time-resolved photoluminescence
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-44290DOI: 10.1063/1.3295430ISI: 000281590800151Local ID: 76181ISBN: 978-0-7354-0736-7OAI: oai:DiVA.org:liu-44290DiVA: diva2:265152
PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 27 July–1 August 2009