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Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Method
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-6235-7038
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
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2009 (English)In: PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors / [ed] Marília J. Caldas, Nelson Studart, Melville, N.Y, USA: American Institute of Physics (AIP), 2009, 319-320 p.Conference paper, Published paper (Refereed)
Abstract [en]

ZnO nanorods on Si substrates were prepared by either a two-steps chemical bath deposition (CBD) method or thermal evaporation technique. 11 was found that the effective decay time of the near bandgap recombinations strongly depends on the method, which was used to grow the ZnO nanorods. ZnO nanorods grown by the CBD exhibit characteriristic two-exponential decay curves, while ZnO nanorods grown by thermal evaporation technique show single exponential decays. The experimental results show that the fast exponential decay from the CBD grown ZnO nanorods is related to the surface recombination, while the slow decay is related to the "bulk" decay. The results also show that an annealing treatment around 500 degrees C to 700 degrees C significantly reduces the surface recombination rate.

Place, publisher, year, edition, pages
Melville, N.Y, USA: American Institute of Physics (AIP), 2009. 319-320 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; 1199
Keyword [en]
ZnO nanorods, surface recombination, optical properties and time-resolved photoluminescence
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-44290DOI: 10.1063/1.3295430ISI: 000281590800151Local ID: 76181ISBN: 978-0-7354-0736-7 (print)OAI: oai:DiVA.org:liu-44290DiVA: diva2:265152
Conference
PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 27 July–1 August 2009
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22Bibliographically approved

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Zhao, QingxiangYang, Li-LiWillander, MagnusPozina, GaliaHoltz, Per-Olof

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