Charge state control of single InAs/GaAs quantum dots by means of an external magnetic field
2008 (English)In: in PHYSICS OF SEMICONDUCTORS, vol 1199, AIP , 2008, 297-298 p.Conference paper (Refereed)
Individual InAs/GaAs quantum dots (QDs) are studied with micro-photoluminescence in the presence of an applied external magnetic field. Attention is focused on the redistribution between the spectral lines of a single QD observed at increased external magnetic field when the magnetic field is applied parallel to the growth direction (Faraday geometry). The effect is shown to be transport related as the electron drift velocity in the QD-plane is decreased by the applied magnetic field and this affects the probability for electron capture into the QD.
Place, publisher, year, edition, pages
AIP , 2008. 297-298 p.
quantum dot, photoluminescence, magnetic field, Faraday, Voigt, transport
IdentifiersURN: urn:nbn:se:liu:diva-44292DOI: 10.1063/1.3295418ISI: 000281590800140Local ID: 76185ISBN: 978-073540736-7OAI: oai:DiVA.org:liu-44292DiVA: diva2:265154
ICPS 29th International Conference on the Physics of Semiconductors,2008