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In situ DRIFT study of the CO response mechanism of MISFET sensors using Pt/SiO2 model sensor
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.
Chalmers Tekniska Högskola.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.ORCID iD: 0000-0002-2817-3574
Chalmers Tekniska Högskola.
2008 (English)In: Proceedings of IEEE Sensors, IEEE , 2008, 1309-1312 p.Conference paper, Published paper (Refereed)
Abstract [en]

The temperature dependence of the sensor response towards CO of SiC-FET sensors has been studied by combining in situ DRIFT spectroscopy and sensor response measurements. The DRIFT spectroscopy studies have been performed on a model sensor representing the top layer of a SiC-FET sensor with porous Pt gate. Adsorbates on the model sensor have been studied at varying temperatures and gas concentrations, and correlated to sensor response measurements at similar experimental conditions. The results show that the temperature dependence partly can be correlated to the CO coverage of the surface. The switching point of the sensor response, observed at different temperatures depending on the CO and oxygen concentrations is well in accordance with the kinetics of the CO oxidation reaction.

Place, publisher, year, edition, pages
IEEE , 2008. 1309-1312 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-44314DOI: 10.1109/ICSENS.2008.4716685Local ID: 76302ISBN: 978-1-4244-2581-5 (print)ISBN: 978-1-4244-2580-8 (print)OAI: oai:DiVA.org:liu-44314DiVA: diva2:265176
Conference
IEEE Sensors,2008
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-08-05

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Andersson, MikeLloyd Spetz, Anita

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