Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys
2008 (English)In: 7th International Conference on Physics of Light-Matter Coupling in Nanostructures, 2007, Elsevier Ltd. , 2008, 620-625 p.Conference paper (Refereed)
We employ the optically detected magnetic resonance (ODMR) technique to study and identify important grown-in defects in Ga(In)NP grown by molecular-beam epitaxy (MBE). Several types of defects were revealed from ODMR studies. The dominant defects were found to be related to Ga interstitials, evident form their characteristic hyperfine interaction arising from the spin interaction between the electron and the Ga nucleus. Some other as yet unidentified intrinsic defects were also found to be commonly present in the alloys. The effects of growth conditions (ion bombardment, N2 gas flow, etc.) and post-growth rapid thermal annealing on the formation of these defects were studied in detail, shedding light on the formation mechanism of defects.
Place, publisher, year, edition, pages
Elsevier Ltd. , 2008. 620-625 p.
, SUPERLATTICES AND MICROSTRUCTURES, ISSN 0749-6036 ; 43
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-44352DOI: 10.1016/j.spmi.2007.07.008Local ID: 76378OAI: oai:DiVA.org:liu-44352DiVA: diva2:265214
publicerad i Superlattices and Microstructures 432009-10-102009-10-102013-10-02