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Migration and Luminescence Enhancement Effects of Deuterium in ZnO/ZnCdO Quantum Wells
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 92, 032103- p.Article in journal (Refereed) Published
Abstract [en]

ZnO/ZnCdO/ZnO multiple quantum well samples grown on sapphire substrates by molecular beam epitaxy and annealed in situ were exposed to D2 plasmas at 150 °C. The deuterium showed migration depths of ~0.8 µm for 30 min plasma exposures, with accumulation of 2H in the ZnCdO wells. The photoluminescence (PL) intensity from the samples was increased by factors of 5 at 5 K and ~20 at 300 K as a result of the deuteration, most likely due to passivation of competing nonradiative centers. Annealing up to 300 °C led to increased migration of 2H toward the substrate but no loss of deuterium from the sample and little change in the PL intensity. The initial PL intensities were restored by annealing at >=400 °C as 2H was evolved from the sample (~90% loss by 500 °C). By contrast, samples without in situ annealing showed a decrease in PL intensity with deuteration. This suggests that even moderate annealing temperatures lead to degradation of ZnCdO quantum wells.

Place, publisher, year, edition, pages
2008. Vol. 92, 032103- p.
National Category
Natural Sciences Condensed Matter Physics
URN: urn:nbn:se:liu:diva-44376DOI: 10.1063/1.2836946Local ID: 76424OAI: diva2:265238
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Wang, XingjunChen, WeiminBuyanova, Irina
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