Fabrication and characterization of white light emitting diode based on ZnO nanorods on p-Si
2008 (English)In: 8th IEEE Conference on Nanotechnology, 2008. NANO '08., Piscataway, NJ, USA: IEEE , 2008, 51-54 p.Conference paper (Refereed)
Recently zinc oxide (ZnO) has drawn attention as it exhibits promising properties for making optoelectronic devices, biosensors. In this paper we will present our recent results from research work on the fabrication of light emitting diodes (LEDs) based on n-ZnO nanorods grown on p-Si by a low temperature chemical approach. The ideality factor of the p- Si/n-ZnO junctions was found to be 5.47+0.67. The high value is probably due to the presence of surface state. Structural, electrical and optical characterization from different processed LEDs will be presented and analyzed.
Place, publisher, year, edition, pages
Piscataway, NJ, USA: IEEE , 2008. 51-54 p.
Nanotechnology, Zinc oxide, Nanorods
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-44584DOI: 10.1109/NANO.2008.23Local ID: 77135ISBN: 978-1-4244-2103-9 (print)ISBN: 978-1-4244-2104-6 (online)OAI: oai:DiVA.org:liu-44584DiVA: diva2:265446
2008 8th IEEE Conference on Nanotechnology, Arlington, Texas USA, 18-21 August 2008