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Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2008 (English)In: Journal of Crystal Growth, Vol. 310, 2008, Vol. 310, no 5, 1006-1009 p.Conference paper, Published paper (Refereed)
Abstract [en]

Defects in as-grown commercial zinc oxide (ZnO) substrates were studied by photoluminescence and optical detection of magnetic resonance (ODMR). In addition to the Zn vacancy and shallow donor centers, we observed several ODMR centers with spin S=1/2, labeled LU1-LU4. Among these, the axial LU3 and non-axial LU4 centers were detected in all studied samples. The ODMR signals of LU3/LU4 were found to be drastically increased after electron irradiation. The preliminary result indicates that these common ODMR centers in as-grown ZnO are related to intrinsic defects. © 2007 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 1006-1009 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-44603DOI: 10.1016/j.jcrysgro.2007.11.144Local ID: 77174OAI: oai:DiVA.org:liu-44603DiVA: diva2:265465
Conference
E-MRS Spring Meeting
Note
E-MRS Spring Meeting, 2007Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-01-15

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Nguyen, Son TienIvanov, Ivan GueorguievWillander, MagnusJanzén, ErikYakimova, Rositsa

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Nguyen, Son TienIvanov, Ivan GueorguievWillander, MagnusJanzén, ErikYakimova, Rositsa
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The Institute of TechnologySemiconductor MaterialsDepartment of Science and TechnologyNanostructured Materials
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