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Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
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2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 12Article in journal (Refereed) Published
Abstract [en]

Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN (0001) ∥Si (001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15° with respect to each other: AlN 〈11 2- 0〉 ∥Si [110], AlN 〈01 1- 0〉 ∥Si [110], AlN 〈11 2- 0〉 ∥Si [100], and AlN 〈01 1- 0〉 ∥Si [100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 100, no 12
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Natural Sciences
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URN: urn:nbn:se:liu:diva-44683DOI: 10.1063/1.2402971Local ID: 77283OAI: oai:DiVA.org:liu-44683DiVA: diva2:265545
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Birch, JensPersson, PerHultman, Lars

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