Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 100, no 12Article in journal (Refereed) Published
Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN (0001) ∥Si (001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15° with respect to each other: AlN 〈11 2- 0〉 ∥Si , AlN 〈01 1- 0〉 ∥Si , AlN 〈11 2- 0〉 ∥Si , and AlN 〈01 1- 0〉 ∥Si  An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 100, no 12
IdentifiersURN: urn:nbn:se:liu:diva-44683DOI: 10.1063/1.2402971Local ID: 77283OAI: oai:DiVA.org:liu-44683DiVA: diva2:265545