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On the origin of spin loss in GaMnN/InGaN Light-Emitting Diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, 2599- p.Article in journal (Refereed) Published
Abstract [en]

 Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.

Place, publisher, year, edition, pages
2004. Vol. 84, 2599- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45004DOI: 10.1063/1.1695100Local ID: 79392OAI: oai:DiVA.org:liu-45004DiVA: diva2:265866
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaIzadifard, MortezaChen, Weimin

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