On the origin of spin loss in GaMnN/InGaN Light-Emitting Diodes
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 84, 2599- p.Article in journal (Refereed) Published
Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.
Place, publisher, year, edition, pages
2004. Vol. 84, 2599- p.
IdentifiersURN: urn:nbn:se:liu:diva-45004DOI: 10.1063/1.1695100Local ID: 79392OAI: oai:DiVA.org:liu-45004DiVA: diva2:265866