Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 70, no 12, 121201- p.Article in journal (Refereed) Published
Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
Place, publisher, year, edition, pages
APS , 2004. Vol. 70, no 12, 121201- p.
IdentifiersURN: urn:nbn:se:liu:diva-45005DOI: 10.1103/PhysRevB.70.121201Local ID: 79393OAI: oai:DiVA.org:liu-45005DiVA: diva2:265867