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Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 70, no 12, 121201- p.Article in journal (Refereed) Published
Abstract [en]

Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .

Place, publisher, year, edition, pages
APS , 2004. Vol. 70, no 12, 121201- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45005DOI: 10.1103/PhysRevB.70.121201Local ID: 79393OAI: oai:DiVA.org:liu-45005DiVA: diva2:265867
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Vorona, IgorBuyanova, IrinaChen, Weimin

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