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Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
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2004 (English)In: Journal of Electronic Materials, ISSN 0361-5235, Vol. 33, no 3, 241-247 p.Article in journal (Refereed) Published
Abstract [en]

Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called -spin-LEDs-). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

Place, publisher, year, edition, pages
2004. Vol. 33, no 3, 241-247 p.
National Category
Natural Sciences Condensed Matter Physics
URN: urn:nbn:se:liu:diva-45007DOI: 10.1007/s11664-004-0186-7Local ID: 79395OAI: diva2:265869
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Buyanova, IrinaChen, Weimin
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The Institute of TechnologyFunctional Electronic Materials
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