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Experimental evidence for N-induced strong coupling of host conduction band states in GaNP: insight into the dominant mechanism for giant band-gap bowing
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2004 (English)In: Physical review. B, Condensed matter and materials physics, Vol. 69, 201303- p.Article in journal (Refereed) Published
Abstract [en]

 Direct evidence for N-induced strong coupling of host conduction band (CB) states in GaNxP1-x is provided by photoluminescence excitation. It is manifested as: (1) a drastic change in the ratio of oscillator strengths between the optical transitions involving the CB minimum (CBM) and the high-lying Γ CB state; (2) a strong blueshift of the Γ CB state with increasing x accompanying a redshift of the CBM, (3) pinning of the localized N states and a newly emerging t2 (L or X3) CB state. These findings shed new light on the issue of the dominant mechanism responsible for the giant band-gap bowing of dilute nitrides.

Place, publisher, year, edition, pages
2004. Vol. 69, 201303- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45008DOI: 10.1103/PhysRevB.69.201303Local ID: 79410OAI: oai:DiVA.org:liu-45008DiVA: diva2:265870
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Buyanova, IrinaIzadifard, MortezaChen, Weimin

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