Experimental evidence for N-induced strong coupling of host conduction band states in GaNP: insight into the dominant mechanism for giant band-gap bowing
2004 (English)In: Physical review. B, Condensed matter and materials physics, Vol. 69, 201303- p.Article in journal (Refereed) Published
Direct evidence for N-induced strong coupling of host conduction band (CB) states in GaNxP1-x is provided by photoluminescence excitation. It is manifested as: (1) a drastic change in the ratio of oscillator strengths between the optical transitions involving the CB minimum (CBM) and the high-lying Γ CB state; (2) a strong blueshift of the Γ CB state with increasing x accompanying a redshift of the CBM, (3) pinning of the localized N states and a newly emerging t2 (L or X3) CB state. These findings shed new light on the issue of the dominant mechanism responsible for the giant band-gap bowing of dilute nitrides.
Place, publisher, year, edition, pages
2004. Vol. 69, 201303- p.
IdentifiersURN: urn:nbn:se:liu:diva-45008DOI: 10.1103/PhysRevB.69.201303Local ID: 79410OAI: oai:DiVA.org:liu-45008DiVA: diva2:265870