Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, 6347- p.Article in journal (Refereed) Published
By using a variety of optical characterization techniques, including cathodoluminescence, temperature-dependent cw- and time-resolved photoluminescence (PL), and PL excitation spectroscopies, high optical quality of the GaN0.018P0.982 epilayers lattice matched to Si substrates is demonstrated and is shown to be comparable to that of the “state-of-the-art” GaNP alloys grown on GaP substrates. The growth of GaNP on Si is, however, found to facilitate the formation of several point defects, including complexes involving Ga interstitial atoms (Gai).
Place, publisher, year, edition, pages
2004. Vol. 85, 6347- p.
IdentifiersURN: urn:nbn:se:liu:diva-45010DOI: 10.1063/1.1839286Local ID: 79412OAI: oai:DiVA.org:liu-45010DiVA: diva2:265872