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Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2004 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 33, no 5, 467-471 p.Article in journal (Refereed) Published
Abstract [en]

 (Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.

Place, publisher, year, edition, pages
2004. Vol. 33, no 5, 467-471 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45011DOI: 10.1007/s11664-004-0204-9Local ID: 79413OAI: oai:DiVA.org:liu-45011DiVA: diva2:265873
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaIzadifard, MortezaStorasta, LiutaurasChen, Weimin

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