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Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1−x∕GaAs quantum wells
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2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 69, 245305- p.Article in journal (Refereed) Published
Abstract [en]

We derive an analytical model to describe the conduction-band states of GaNAs-based quantum well structures, including the band anticrossing effect between N resonant states and the conduction-band edge. The predictions of the model are compared to those obtained using a full ten-band k·p model based on the same set of parameters. Both methods are then tested by comparison with the experimentally determined ground- and excited-state interband transition energies of GaNxAs1−x quantum wells of different well widths and N composition x obtained at 300 K and under hydrostatic pressures up to 2.0 GPa . We show that the transition energies can be described by a consistent set of material parameters in all the samples studied, and present how the conduction to valence-band offset ratio varies strongly with x in GaNxAs1−x∕GaAs quantum well structures. We conclude that the model presented can be used to predict the transition energies and electron subband structure of any GaNxAs1−x∕GaAs quantum well with well width between 2 and 25 nm , and N composition x between 1 and 4% , although further work is still required to confirm the optimum choice for the variation of band offset ratio with composition.

Place, publisher, year, edition, pages
2004. Vol. 69, 245305- p.
National Category
Natural Sciences Condensed Matter Physics
URN: urn:nbn:se:liu:diva-45012DOI: 10.1103/PhysRevB.69.245305Local ID: 79414OAI: diva2:265874
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Chen, WeiminBuyanova, Irina
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The Institute of TechnologyFunctional Electronic Materials
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Physical Review B. Condensed Matter and Materials Physics
Natural SciencesCondensed Matter Physics

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