Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys: a proof for a general property of dilute nitrides
2004 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 70, no 24, 245215-245219 p.Article in journal (Refereed) Published
Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
Place, publisher, year, edition, pages
2004. Vol. 70, no 24, 245215-245219 p.
IdentifiersURN: urn:nbn:se:liu:diva-45014DOI: 10.1103/PhysRevB.70.245215Local ID: 79416OAI: oai:DiVA.org:liu-45014DiVA: diva2:265876