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Defects in dilute nitrides
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 16, S3027-S3035 p.Article, review/survey (Refereed) Published
Abstract [en]

An overview of our present knowledge and understanding of defects in dilute nitrides will be provided and their important roles in determining the success of dilute nitrides for optoelectronic device applications will be underlined. A brief summary of experimental results of defects by various techniques reported so far in the literature will be given. Our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in Ga(In)NAs and Ga(Al, In)NP will be discussed in some detail, in an effort to provide chemical identification and experimental signatures of defects. Among them, intrinsic defects such as antisites and self-interstitials have been positively identified, and the effects of growth conditions, chemical compositions and post-growth processing on the formation of the defects were studied. The information retrieved from the experimental findings is expected to provide useful guidance for designing strategies to eliminate defects that are harmful to device performance.

Place, publisher, year, edition, pages
2004. Vol. 16, S3027-S3035 p.
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-45018DOI: 10.1088/0953-8984/16/31/003Local ID: 79420OAI: oai:DiVA.org:liu-45018DiVA: diva2:265880
Note
Invited Review ArticleAvailable from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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