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Analysis of band anticrossing in GaNxP1-x alloys
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .ORCID iD: 0000-0001-9229-2028
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2004 (English)In: Physical review. B, Condensed matter and materials physics, Vol. 70, 085209- p.Article in journal (Refereed) Published
Abstract [en]

 Temperature-dependent absorption, photoluminescence excitation, and spectroscopic ellipsometry measurements are employed to accurately determine compositional and temperature dependences of the conduction band (CB) states in GaNP alloys. The CB edge and the higher lying Γc CB minimum (CBM) are shown to exhibit an apparently anticrossing behavior, i.e., the N-induced redshift of the bandgap energy is accompanied by a matching blueshift of the Γc CBM. The obtained data can be phenomenologically described by the band anticrossing model. By considering strong temperature dependence of the energy of the interacting N level, which has largely been overlooked in earlier studies of GaNP, the interacting N level can be attributed to the isolated substitutional NP and the coupling parameter is accurately determined.

Place, publisher, year, edition, pages
2004. Vol. 70, 085209- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45022DOI: 10.1103/PhysRevB.70.085209Local ID: 79430OAI: oai:DiVA.org:liu-45022DiVA: diva2:265884
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Buyanova, IrinaIzadifard, MortezaArwin, HansChen, Weimin

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The Institute of TechnologyFunctional Electronic MaterialsDepartment of Physics, Chemistry and BiologyApplied Optics
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