Role of hydrogen in improving optical quality of GaNAs alloys
2003 (English)In: 11th Int. Conf. on Narrow Bandgap Semiconductors,2003, Physica E, Vol 20: Elsevier , 2003, 313-316 p.Conference paper (Refereed)
Effects of hydrogen irradiation on optical quality of GaNxAs1−x alloys grown by gas source molecular beam epitaxy are studied by photoluminescence (PL) and PL excitation spectroscopies. A strong blue shift of the alloy band gap towards the value of a reference N-free GaAs samples is revealed. Substantial improvements in the optical quality of the structures induced by hydrogen, due to a reduction of band edge potential fluctuations, is also demonstrated. The effect is tentatively attributed to the preferential trapping of hydrogen atoms at the lattice sites with the highest N compositions, which leads to the neutralization of electronic states contributing to the band tail states as well as to the improvement in strain uniformity.
Place, publisher, year, edition, pages
Physica E, Vol 20: Elsevier , 2003. 313-316 p.
, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ISSN 1386-9477 ; 20
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45025DOI: 10.1016/j.physe.2003.08.025Local ID: 79452OAI: oai:DiVA.org:liu-45025DiVA: diva2:265887