As-grown 4H-SiC epilayers with magnetic properties
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 747-750 p.Conference paper (Refereed)
A growth process for diluted magnetic SiC has been explored for as-grown epitaxiallayers by introducing Mn ions. Depending on the growth conditions, either high Mn doping orexcess concentrations with second phases may form in the layers. Under those conditions wherecompound phases appear, there is a magnetic response in the material as demonstrated usingSQUID measurements with a transition temperature of 160K in the as-grown material. There is noresponse in layers for which the second phases have been removed by etching.
Place, publisher, year, edition, pages
2004. 747-750 p.
, MATERIALS SCIENCE FORUM, ISSN 1662-9752 ; 457-460
National CategoryNatural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45027DOI: 10.4028/www.scientific.net/MSF.457-460.747Local ID: 79454OAI: oai:DiVA.org:liu-45027DiVA: diva2:265889
International Conference on SiC and Related Materials ICSCRM03,2003