Origin of bandgap bowing in GaNP alloys
2004 (English)Conference paper (Refereed)
By employing photoluminescence excitation (PLE) spectroscopy, the authors provide direct evidence for N-induced strong coupling and repelling of host conduction band (CB) states in GaNxP1-x. This strong coupling is manifested as (i) a drastic change in the ratio of oscillator strengths between the optical transition near Eg/rGamma and that near the CB minimum (CBM); (ii) a strong blue shift of the a1(Γ) state with increasing N composition accompanying a red shift of the CBM; (iii) pinning of the energies of the N-related levels; and (iv) the appearance of t2(L) or t2(X3) upon N incorporation of which the energy position is insensitive to N compositions. These findings shed new light on the controversial issue of the dominant mechanism responsible for the giant bandgap bowing of dilute nitrides.
Place, publisher, year, edition, pages
2004. Vol. 151, 389- p.
IdentifiersURN: urn:nbn:se:liu:diva-45030DOI: 10.1049/ip-opt:20040865Local ID: 79457OAI: oai:DiVA.org:liu-45030DiVA: diva2:265892