liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Origin of bandgap bowing in GaNP alloys
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Show others and affiliations
2004 (English)Conference paper, Published paper (Refereed)
Abstract [en]

 By employing photoluminescence excitation (PLE) spectroscopy, the authors provide direct evidence for N-induced strong coupling and repelling of host conduction band (CB) states in GaNxP1-x. This strong coupling is manifested as (i) a drastic change in the ratio of oscillator strengths between the optical transition near Eg/rGamma and that near the CB minimum (CBM); (ii) a strong blue shift of the a1(Γ) state with increasing N composition accompanying a red shift of the CBM; (iii) pinning of the energies of the N-related levels; and (iv) the appearance of t2(L) or t2(X3) upon N incorporation of which the energy position is insensitive to N compositions. These findings shed new light on the controversial issue of the dominant mechanism responsible for the giant bandgap bowing of dilute nitrides.

Place, publisher, year, edition, pages
2004. Vol. 151, 389- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45030DOI: 10.1049/ip-opt:20040865Local ID: 79457OAI: oai:DiVA.org:liu-45030DiVA: diva2:265892
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Buyanova, IrinaIzadifard, MortezaChen, Weimin

Search in DiVA

By author/editor
Buyanova, IrinaIzadifard, MortezaChen, Weimin
By organisation
The Institute of TechnologyFunctional Electronic MaterialsDepartment of Physics, Chemistry and Biology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 86 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf