Effects of rapid thermal annealing on optical quality of GaNP alloys
2004 (English)In: EMRS-2004 Spring Meeting,2004, 2004, Vol. 151, 335- p.Conference paper (Refereed)
Significant improvements in radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy (MBE) are achieved by post-growth rapid thermal annealing (RTA). From temperature-dependent CW and time-resolved photoluminescence (PL) spectroscopies combined with PL excitation measurements, the observed improvements are attributed to annealing out of competing nonradiative centres. This conclusion is supported by the following experimental evidence: reduced thermal quenching of the PL intensity resulting in a substantial (up to 18 times) increase at room temperature (RT) after RTA, and simultaneous improvements in carrier lifetime at RT deduced from time-resolved PL measurements.
Place, publisher, year, edition, pages
2004. Vol. 151, 335- p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45031DOI: 10.1049/ip-opt:20040872Local ID: 79458OAI: oai:DiVA.org:liu-45031DiVA: diva2:265893