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Effects of rapid thermal annealing on optical quality of GaNP alloys
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2004 (English)In: EMRS-2004 Spring Meeting,2004, 2004, Vol. 151, 335- p.Conference paper, Published paper (Refereed)
Abstract [en]

Significant improvements in radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy (MBE) are achieved by post-growth rapid thermal annealing (RTA). From temperature-dependent CW and time-resolved photoluminescence (PL) spectroscopies combined with PL excitation measurements, the observed improvements are attributed to annealing out of competing nonradiative centres. This conclusion is supported by the following experimental evidence: reduced thermal quenching of the PL intensity resulting in a substantial (up to 18 times) increase at room temperature (RT) after RTA, and simultaneous improvements in carrier lifetime at RT deduced from time-resolved PL measurements.

Place, publisher, year, edition, pages
2004. Vol. 151, 335- p.
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Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-45031DOI: 10.1049/ip-opt:20040872Local ID: 79458OAI: oai:DiVA.org:liu-45031DiVA: diva2:265893
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Izadifard, MortezaBuyanova, IrinaBergman, PederChen, Weimin

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