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Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 11, 1700- p.Article in journal (Refereed) Published
Abstract [en]

 The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II-VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer.

Place, publisher, year, edition, pages
2003. Vol. 82, no 11, 1700- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45046DOI: 10.1063/1.1561570Local ID: 79490OAI: oai:DiVA.org:liu-45046DiVA: diva2:265908
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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