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Nitrogen passivation induced by atomic hydrogen: The GaP1-yNy case
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2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 67, no 20, 2013031-2013034 p.Article in journal (Refereed) Published
Abstract [en]

We report on the evolution of the optical properties of GaP1-yNy epilayers upon hydrogen irradiation for an extended nitrogen concentration range (y = 0.05% - 1.3%). For y = 0.6%, photoluminescence measurements show that hydrogen leads to an apparent band gap widening and to an ensuing appearance of N cluster states in the forbidden gap of GaP1-yNy, Hydrogen removal from the samples results in a full recovery of the electronic properties of the as-grown material. For lower N concentration (y = 0.05%), hydrogen causes a spectral weight transfer from electronic levels associated with closer N pairs to those associated with more distant N pairs and single N atoms.

Place, publisher, year, edition, pages
2003. Vol. 67, no 20, 2013031-2013034 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-45048DOI: 10.1103/PhysRevB.67.201303Local ID: 79492OAI: diva2:265910
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Buyanova, IrinaChen, Weimin
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The Institute of TechnologyFunctional Electronic Materials
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