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Hydrogen related effects in diluted nitrides
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2003 (English)In: 22nd Int. Conf. on Defects in Semiconductors,2003, Elsevier , 2003, 371- p.Conference paper (Refereed)
Abstract [en]

Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented. In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation. In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.

Place, publisher, year, edition, pages
Elsevier , 2003. 371- p.
National Category
Natural Sciences Condensed Matter Physics
URN: urn:nbn:se:liu:diva-45059DOI: 10.1016/j.physb.2003.09.064Local ID: 79503OAI: diva2:265921
INVITED TALKAvailable from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Buyanova, IrinaChen, Weimin
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The Institute of TechnologyFunctional Electronic Materials
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