Hydrogen related effects in diluted nitrides
2003 (English)In: 22nd Int. Conf. on Defects in Semiconductors,2003, Elsevier , 2003, 371- p.Conference paper (Refereed)
Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented. In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation. In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.
Place, publisher, year, edition, pages
Elsevier , 2003. 371- p.
, PHYSICA B-CONDENSED MATTER, ISSN 0921-4526 ; 340
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45059DOI: 10.1016/j.physb.2003.09.064Local ID: 79503OAI: oai:DiVA.org:liu-45059DiVA: diva2:265921