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Temperature behavior of the GaNP band gap energy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2003 (English)In: E-MRS 2002 Spring Meeting,2002, Elsevier , 2003, 493-496 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report experimental results from temperature dependence studies of the optical absorption edge of the GaNP alloys with N compositions up to 3.1%. The observed increase in the absorption coefficient with increasing N content, as well as the spectral shape of the absorption edge incline a band crossover to a direct band gap for the alloy, in agreement with previous studies. Temperature variation of the GaNP band gap, however, is found to be rather similar to that in the parental GaP, except for the N composition of ~1% when a slow down in the thermally induced reduction of the band gap energy was observed due to a resonant interaction with the N-related defects. We thus suggest that both contributions from the interaction with the localized states and the increasing Γ character of the conduction band states are important for the alloy formation.

Place, publisher, year, edition, pages
Elsevier , 2003. 493-496 p.
Series
SOLID-STATE ELECTRONICS, ISSN 0038-1101 ; 47
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-45061DOI: 10.1016/S0038-1101(02)00401-XLocal ID: 79505OAI: oai:DiVA.org:liu-45061DiVA: diva2:265923
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Buyanova, IrinaChen, Weimin

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