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Radiative recombination mechanism in GaNxP1-x alloys
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 80, 1740- p.Article in journal (Refereed) Published
Abstract [en]

 Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up to 4% is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition, these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent redshift of the PL maximum position.

Place, publisher, year, edition, pages
2002. Vol. 80, 1740- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45077DOI: 10.1063/1.1455144Local ID: 79593OAI: oai:DiVA.org:liu-45077DiVA: diva2:265939
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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