Radiative recombination mechanism in GaNxP1-x alloys
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 80, 1740- p.Article in journal (Refereed) Published
Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up to 4% is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition, these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent redshift of the PL maximum position.
Place, publisher, year, edition, pages
2002. Vol. 80, 1740- p.
IdentifiersURN: urn:nbn:se:liu:diva-45077DOI: 10.1063/1.1455144Local ID: 79593OAI: oai:DiVA.org:liu-45077DiVA: diva2:265939