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Photoluminescence upconversion in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 14, 2547- p.Article in journal (Refereed) Published
Abstract [en]

 Efficient photoluminescence upconversion is observed in 4H-SiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be excited by tuning the laser to the NP line of UD-3 at 1.356 eV. In samples containing either only UD-3 or only titanium, a different photoluminescence upconversion process can be observed, which occurs at photon energies higher than ~1.5 eV without exhibiting sharp features. At least one of the two processes generates both free electrons and free holes and can, therefore, be a candidate for an important recombination channel.

Place, publisher, year, edition, pages
2002. Vol. 81, no 14, 2547- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45079DOI: 10.1063/1.1511813Local ID: 79596OAI: oai:DiVA.org:liu-45079DiVA: diva2:265941
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Wagner, MatthiasIvanov, Ivan GueorguievStorasta, LiutaurasBergman, PederMagnusson, BjörnChen, WeiminJanzén, Erik

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Wagner, MatthiasIvanov, Ivan GueorguievStorasta, LiutaurasBergman, PederMagnusson, BjörnChen, WeiminJanzén, Erik
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