Photoluminescence upconversion in 4H-SiC
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 81, no 14, 2547- p.Article in journal (Refereed) Published
Efficient photoluminescence upconversion is observed in 4H-SiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be excited by tuning the laser to the NP line of UD-3 at 1.356 eV. In samples containing either only UD-3 or only titanium, a different photoluminescence upconversion process can be observed, which occurs at photon energies higher than ~1.5 eV without exhibiting sharp features. At least one of the two processes generates both free electrons and free holes and can, therefore, be a candidate for an important recombination channel.
Place, publisher, year, edition, pages
2002. Vol. 81, no 14, 2547- p.
IdentifiersURN: urn:nbn:se:liu:diva-45079DOI: 10.1063/1.1511813Local ID: 79596OAI: oai:DiVA.org:liu-45079DiVA: diva2:265941