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Magneto-optical and light-emission properties of III-As-N semiconductors
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
2002 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 17, no 8, 815-822 p.Article in journal (Refereed) Published
Abstract [en]

A brief review on our present knowledge of optical and magneto-optical properties of III-V-N alloys, in particular, Ga(In)NAs alloys with low nitrogen compositions is given. The main attention is focused on fundamental electronic parameters of the Ga(In)NAs alloys as well as key material-related issues which are relevant to device applications, such as identification of dominant recombination processes in the alloys, compositional dependence of electron effective mass and band alignment in Ga(In)NAs-based heterostructures.

Place, publisher, year, edition, pages
2002. Vol. 17, no 8, 815-822 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45085DOI: 10.1088/0268-1242/17/8/310Local ID: 79650OAI: oai:DiVA.org:liu-45085DiVA: diva2:265947
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Publisher's full texthttp://www.iop.org/EJ/article/0268-1242/17/8/310/s20810.html

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Buyanova, IrinaChen, Weimin

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