Magneto-optical and light-emission properties of III-As-N semiconductors
2002 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, Vol. 17, no 8, 815-822 p.Article in journal (Refereed) Published
A brief review on our present knowledge of optical and magneto-optical properties of III-V-N alloys, in particular, Ga(In)NAs alloys with low nitrogen compositions is given. The main attention is focused on fundamental electronic parameters of the Ga(In)NAs alloys as well as key material-related issues which are relevant to device applications, such as identification of dominant recombination processes in the alloys, compositional dependence of electron effective mass and band alignment in Ga(In)NAs-based heterostructures.
Place, publisher, year, edition, pages
2002. Vol. 17, no 8, 815-822 p.
IdentifiersURN: urn:nbn:se:liu:diva-45085DOI: 10.1088/0268-1242/17/8/310Local ID: 79650OAI: oai:DiVA.org:liu-45085DiVA: diva2:265947