On the spin injection in ZnMnSe/ZnCdSe heterostructures
2002 (English)Conference paper (Refereed)
We present results from a detailed study of spin injection in thin II-VI wide band gap semiconductor heterostructures by magnetooptical spectroscopy. It is shown that efficient spin alignment can be achieved in a diluted magnetic semiconductor barrier (a layer of ZnMnSe or ZnMnSe/CdSe superlattice) as thin as 10 nm. Rather efficient spin injection from such a thin spin aligner to a non-magnetic quantum well is demonstrated, even when the tunneling energy barrier is as thick as 10 nm. The effect of spin relaxation process on spin injection is also closely examined.
Place, publisher, year, edition, pages
Physica E, Vol 13: Elsevier , 2002. 538- p.
IdentifiersURN: urn:nbn:se:liu:diva-45088DOI: 10.1016/S1386-94770200161-3Local ID: 79654OAI: oai:DiVA.org:liu-45088DiVA: diva2:265950