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Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

 Type I band line-up in GaNxAs1−x/GaAs multiple quantum wells (MQW) with xless-than-or-equals, slant3% is concluded based on the following experimental results: (i) a comparable radiative decay time of the GaNAs-related photoluminescence (PL) measured from single GaNAs epilayers and the GaNAs/GaAs MQW structures, (ii) the observed PL polarization, and (iii) the spatial confinement of photoexcited holes within the GaNAs layers under resonant excitation of the GaNAs MQW.

Place, publisher, year, edition, pages
Physica E, Vol. 13: Elsevier , 2002. 1074- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45089DOI: 10.1016/S1386-94770200306-5Local ID: 79655OAI: oai:DiVA.org:liu-45089DiVA: diva2:265951
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Buyanova, IrinaPozina, GaliaChen, Weimin

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