Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies
2002 (English)Conference paper (Refereed)
Type I band line-up in GaNxAs1−x/GaAs multiple quantum wells (MQW) with xless-than-or-equals, slant3% is concluded based on the following experimental results: (i) a comparable radiative decay time of the GaNAs-related photoluminescence (PL) measured from single GaNAs epilayers and the GaNAs/GaAs MQW structures, (ii) the observed PL polarization, and (iii) the spatial confinement of photoexcited holes within the GaNAs layers under resonant excitation of the GaNAs MQW.
Place, publisher, year, edition, pages
Physica E, Vol. 13: Elsevier , 2002. 1074- p.
IdentifiersURN: urn:nbn:se:liu:diva-45089DOI: 10.1016/S1386-94770200306-5Local ID: 79655OAI: oai:DiVA.org:liu-45089DiVA: diva2:265951