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Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
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2002 (English)In: MRS Fall Meeting 2001,2001, Materials Research Society Symposium - Proceedings, Vol. 692: MRS , 2002, 67-72 p.Conference paper, Published paper (Refereed)
Abstract [en]

 The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.

Place, publisher, year, edition, pages
Materials Research Society Symposium - Proceedings, Vol. 692: MRS , 2002. 67-72 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45090Local ID: 79656OAI: oai:DiVA.org:liu-45090DiVA: diva2:265952
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Chen, WeiminBuyanova, Irina

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