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On the Origin of Light Emission in GaNxP1-x
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2002 (English)Conference paper, Published paper (Refereed)
Abstract [en]

 Temperature dependent photoluminescence (PL) and absorption measurements are employed to clarify mechanism for light emission in GaNP alloys with low (< 4.1) nitrogen content. The PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent red shift of the PL maximum position. On the other hand, band-to-band recombination in the alloy remains predominantly non-radiative presumably due to the presence of a large number of competing recombination channels.

Place, publisher, year, edition, pages
Materials Research Society Symposium Proceedings, Vol.722: MRS , 2002. 135- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45093Local ID: 79659OAI: oai:DiVA.org:liu-45093DiVA: diva2:265955
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Buyanova, IrinaChen, Weimin

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