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Formation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonance
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 19, 3089- p.Article in journal (Refereed) Published
Abstract [en]

The formation of two nonradiative defects (i.e., an AsGa-related complex and an unknown deep-level defect with g = 2.03) in GaNxAs1-x epilayers and GaAs/GaNxAs1-x multiple-quantum-well structures, grown by molecular beam epitaxy, is studied by the optically detected magnetic resonance technique. It is shown that contributions by these defects in competing carrier recombination strongly vary with the nitrogen composition. An increase in the growth temperature or postgrowth rapid thermal annealing significantly reduces the influence of the nonradiative defects studied, and is accompanied by a remarkable improvement in the optical properties of the structures.

Place, publisher, year, edition, pages
2001. Vol. 79, no 19, 3089- p.
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Natural Sciences Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-45104DOI: 10.1063/1.1416155Local ID: 79713OAI: oai:DiVA.org:liu-45104DiVA: diva2:265966
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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