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Type I band alignment in the GaNxAs1-x/GaAs quantum wells
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 63, no 3, 333031-333034 p.Article in journal (Refereed) Published
Abstract [en]

Three independent experimental techniques, namely, time-resolved photoluminescence (PL) spectroscopy, PL polarization, and optically detected cyclotron resonance, are employed to determine the band alignment of GaNxAS1-x/GaAs quantum structures with a low-N composition. It is concluded that band lineup is type I based on the following experimental results: (i) comparable radiative decay time of the GaNAs-related emission measured from single GaNAs epilayers and from GaNAs/GaAs quantum well (QW) structures, (ii) polarization of the GaNAs-related emission, and (iii) spatial confinement of the photoexcited holes within the GaNAs layers under resonant excitation of the GaNAs QW's.

Place, publisher, year, edition, pages
2001. Vol. 63, no 3, 333031-333034 p.
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Physical Sciences
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URN: urn:nbn:se:liu:diva-45105DOI: DOI: 10.1103/PhysRevB.63.033303Local ID: 79714OAI: oai:DiVA.org:liu-45105DiVA: diva2:265967
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaPozina, GaliaChen, Weimin

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