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Signature of an intrinsic point defect in GaNxAs1-x
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6405-9509
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 63, no 3, 332031-332034 p.Article in journal (Refereed) Published
Abstract [en]

The first experimental signature of an intrinsic defect in GaNAs is provided from an optically detected magnetic resonance study. The resolved central hyperfine structure identifies the defect with a nuclear spin I = 3/2, containing either an AsGa antisite or a Ga interstitial. From the strength of the hyperfine interaction and the growth conditions, a complex involving the AsGa antisite seems to be a more likely candidate.

Place, publisher, year, edition, pages
2001. Vol. 63, no 3, 332031-332034 p.
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Natural Sciences Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-45106DOI: 10.1103/PhysRevB.63.033203Local ID: 79715OAI: oai:DiVA.org:liu-45106DiVA: diva2:265968
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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