Electronic Properties of Ga(In)NAs Alloys
2001 (English)In: MRS Internet journal of nitride semiconductor research, ISSN 1092-5783, Vol. 6Article in journal (Refereed) Published
A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.
Place, publisher, year, edition, pages
2001. Vol. 6
IdentifiersURN: urn:nbn:se:liu:diva-45110Local ID: 79719OAI: oai:DiVA.org:liu-45110DiVA: diva2:265972