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Electronic Properties of Ga(In)NAs Alloys
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2001 (English)In: MRS Internet journal of nitride semiconductor research, ISSN 1092-5783, E-ISSN 1092-5783, Vol. 6Article in journal (Refereed) Published
Abstract [en]

 A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.

Place, publisher, year, edition, pages
2001. Vol. 6
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45110Local ID: 79719OAI: oai:DiVA.org:liu-45110DiVA: diva2:265972
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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http://nsr.mij.mrs.org/6/2/

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Buyanova, IrinaChen, WeiminMonemar, Bo

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