Optical and electronic properties of GaNAs/GaAs structures
2000 (English)Conference paper (Refereed)
We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.
Place, publisher, year, edition, pages
IEEE , 2000. 483-490 p.
IdentifiersURN: urn:nbn:se:liu:diva-45112DOI: 10.1109/COMMAD.2000.1022995Local ID: 79721ISBN: 0-7803-6698-0OAI: oai:DiVA.org:liu-45112DiVA: diva2:265974
Conference on Optoelectronic and Microelectronic Materials and Devices, 6-8 December 2000, Melbourne, Australia
PLENARY INVITED TALK2009-10-102009-10-102015-09-22