Properties of a grown-in intrinsic defect in GaNAs
2001 (English)In: APS 2001 March Meeting,2001, Bull. Amer. Phys. Soc.: APS , 2001, Vol. 46, 1185- p.Conference paper (Refereed)
Properties of a grown-in intrinsic defect in GaNAs alloys and GaNAs/GaAs quantum well structures with low N composition have been investigated by optically detected magnetic resonance (ODMR). The characteristic hyperfine (HF) structure, arising from S=1/2 and I=3/2, suggests a complex involving the As_Ga antisite as being the most likely candidate for the responsible defect. The strong HF interaction evidences a high localization of the wavefunction of the unpaired electron near the As_Ga antisite, which is found to be rather insensitive to either N composition or quantum confinement. The formation mechanism for the defect has been studied by varying growth temperature or by performing post-growth rapid thermal annealing. It is shown that the defect can be preferably introduced during molecular beam epitaxy (MBE) growth at low temperature under non-equilibrium conditions, similar to the case of its parental compound GaAs grown under similar conditions.
Place, publisher, year, edition, pages
Bull. Amer. Phys. Soc.: APS , 2001. Vol. 46, 1185- p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45119Local ID: 79754OAI: oai:DiVA.org:liu-45119DiVA: diva2:265981