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Hole effective masses in 4H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 16Article in journal (Refereed) Published
Abstract [en]

Optically detected cyclotron resonance (ODCR) at X-band frequency (~9.23 GHz) was used to study hole effective masses in 4H SiC. In addition to the known ODCR signal related to the cyclotron resonance (CR) of electrons we have observed an ODCR peak at a higher magnetic field, which is attributed to the CR of holes. In the vicinity of the maximum of the uppermost valence band, the constant energy surface can be considered as an ellipsoid with the principal axis along the c axis and the effective masses of the holes were determined as mh? = (0.66▒0.02)m0 and mh?=(1.75▒0.02)m0. The influence of the polaron coupling effect on the effective mass values in 4H SiC is discussed. ⌐ 2000 The American Physical Society.

Place, publisher, year, edition, pages
2000. Vol. 61, no 16
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45123Local ID: 79771OAI: oai:DiVA.org:liu-45123DiVA: diva2:265985
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Nguyen, Son TienChen, WeiminHallin, ChristerMonemar, BoJanzén, Erik

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Nguyen, Son TienChen, WeiminHallin, ChristerMonemar, BoJanzén, Erik
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Physical Review B. Condensed Matter and Materials Physics
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