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Direct determination of electron effective mass in GaNAs/GaAs quantum wells
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, no 12, 1843-1845 p.Article in journal (Refereed) Published
Abstract [en]

Electron effective mass (m*e) in GaNxAs1-x/GaAs quantum wells (QWs) is investigated by the optically detected cyclotron resonance technique. The m*e values of 0.12m0 and 0.19m0 are directly determined for the 70-A-thick QWs with N composition of 1.2% and 2.0%, respectively. This sizable increase in the electron effective mass is consistent with the earlier theoretical predictions based on the strong interaction of the lowest conduction band states with the upper lying band states or impurity band induced by the incorporation of N. ⌐ 2000 American Institute of Physics.

Place, publisher, year, edition, pages
2000. Vol. 77, no 12, 1843-1845 p.
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Natural Sciences Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-45124DOI: 10.1063/1.1311324Local ID: 79772OAI: oai:DiVA.org:liu-45124DiVA: diva2:265986
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Chen, WeiminBuyanova, Irina

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