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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 62, no 16, R10607-R10609 p.Article in journal (Refereed) Published
Abstract [en]

A detailed study of as-grown Zn-doped GaN employing optically detected magnetic resonance (ODMR) spectroscopy is presented. Besides the well-known ODMR spectra of an effective-mass-like donor and Zn acceptor, a positive ODMR signal of an S=1 / 2 paramagnetic center was observed when monitoring the dominating blue luminescence band peaking at 2.8 eV. The involvement of a single Ga nucleus in the defect center is revealed from the rather well-resolved hyperfine interactions involving the isotopes 71Ga (39.9%) and 69Ga (60.1%), both with nuclear spin I=3 / 2. The C3v symmetry, the hyperfine interaction and the defect formation suggest a Ga-related complex nature of this center.

Place, publisher, year, edition, pages
2000. Vol. 62, no 16, R10607-R10609 p.
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-45125DOI: 10.1103/PhysRevB.62.R10607Local ID: 79773OAI: oai:DiVA.org:liu-45125DiVA: diva2:265987
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Chen, WeiminBuyanova, IrinaMonemar, Bo

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